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SS25S TE28F 150KR20A 08A10 TTINY W9961CF 11002 11002
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 LL5711 and LL6263
Schottky Diodes
Features
* For general purpose applications * Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. * The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switching and low logic level applications. * This diode is also available in the DO-35 case with type designation 1N5711 and 1N6263.
MiniMELF (SOD-80C)
Cathode Band
.063 (1.6) Dia. .051 (1.3)
.146 (3.7) .130 (3.3)
.019 (0.48) .011 (0.28)
Mechanical Data
Case: MiniMELF Glass Case (SOD-80C) Weight: approx. 0.05g Cathode Band Color: Green Packaging Codes/Options: D1/10K per 13" reel (8mm tape), 20K/box D2/2.5K per 7" reel (8mm tape), 20K/box
Dimensions in inches and (millimeters)
Maximum Ratings & Thermal Characteristics Ratings at 25C ambient temperature unless otherwise specified.
Parameter Peak Inverse Voltage Power Dissipation (Infinite Heatsink) Maximum Single Cycle Surge 10s Square Wave Junction Temperature Storage Temperature Range LL5711 LL6263 Symbol VRRM Ptot IFSM Tj TS Value 70 60 400(1) 2.0 125 -55 to +150 Unit V mW A C C
Electrical Characteristics (TJ = 25C unless otherwise noted)
Parameter Reverse Breakdown Voltage Leakage Current Forward Voltage Drop Junction Capacitance Reverse Recovery Time LL5711 LL6263 Symbol V(BR)R IR VF Ctot trr Test Condition IR = 10A VR = 50V IF = 1.0mA IF = 15mA VR = 0V, f = 1MHz IF = IR = 5mA, recover to 0.1IR Min 70 60 -- -- -- -- -- Typ -- -- -- -- -- -- -- Max -- -- 200 0.41 1.0 2.2 1 Unit V nA V pF ns
Note: (1) Valid provided that electrodes are kept at ambient temperature.
10/6/00
LL5711 and LL6263
Schottky Diodes
Ratings and Characteristic Curves (TA = 25C unless otherwise noted)


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